MJ423-BP

更新时间： 2024-11-14 13:11:35

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
2页	110K
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数据手册

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MJ423-BP 数据手册

M C C

MJ413

MJ423

MJ431

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

ꢀ

10 Amp

NPN Silicon

Power Transistors

125W

)HDWXUHV

•

High Collector-Emitter Voltage V_CES=400V

DC Current Gain Specified 3.5A

High Frequency Response to 2.5 MHz

0D[LPXPꢀ5DWLQJVꢀ

TO-3

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance: 1.0 /W junction to case

Characteristic

Symbol

V_CEX

V_CB

V_EB

I_C

Max

400

5.0

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

I_B

2.0

Total Device Dissipation @T_C=25

Derate above 25

Watts

P_D

125

1.0

PIN 1.

PIN 2.

CASE.

BASE

EMITTER

COLLECTOR

Figure 1 - Power Derating Curve

DIMENSIONS

INCHES

DIM

MIN

1.550

-----

.250

.038

0.55

.430

.215

.440

.665

-----

.151

1.187

.131

MAX

REF

1.050

.335

.043

0.70

BSC

.480

BSC

.830

.165

BSC

.188

MIN

39.37

-----

MAX

REF

26.67

8.51

1.09

1.77

BSC

12.19

BSC

21.08

4.19

BSC

4.77

NOTE

6.35

0.97

1.40

10.92

5.46

11.18

16.89

-----

3.84

30.15

3.33

150

Temperature °C

Power Dissipation (W) - Versus - Temperature °C

100

www.mccsemi.com

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