Datasheet > MJ424

MJ424

更新时间： 2024-09-26 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	64K
描述
isc Silicon NPN Power Transistor

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MJ424 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ424

DESCRIPTION

·High Collector-Emitter Voltage-V_CEX= 700V

·DC Current Gain-h_FE=10(min)@ I_C=2.5A

·Low Collector-Emitter Saturation Voltage-

V_CE(sat)=0.8Vdc(max)@I_C=1Adc

APPLICATIONS

·Designed for use in high voltage applications in deflection

circuits, swithing regulators, inverters, and tine operated

amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

700

350

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

I_B

P_C

100

150

-65~200

℃

T_J

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.75

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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