Datasheet > MJ410

MJ410

更新时间： 2024-11-14 22:30:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	143K
描述
5 AMPERE POWER TRANSISTOR NPN SILICON

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MJ410 数据手册

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SEMICONDUCTOR TECHNICAL DATA

5 AMPERE

POWER TRANSISTOR

NPN SILICON

200 VOLTS

. . . designed for medium to high voltage inverters, converters, regulators and

switching circuits.

100 WATTS

•

High Collector–Emitter Voltage —

= 200 Volts

CEO

•

DC Current Gain Specified @ 1.0 and 2.5 Adc

Low Collector–Emitter Saturation Voltage —

= 0.8 Vdc @ I = 1.0 Adc

CE(sat)

MAXIMUM RATINGS

Rating

Symbol

Value

200

5.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

— Peak

5.0

Base Current

2.0

Adc

Total Device Dissipation @ T = 75 C

Derate above 75 C

100

Watts

W/ C

1.33

Operating Junction Temperature Range

Storage Temperature Range

–65 to +150

–65 to +200

stg

CASE 1–07

TO–204AA

(TO–3)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.75

C/W

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage

200

—

0.25

0.5

Vdc

CEO(sus)

(I = 100 mAdc, I = 0)

Collector Cutoff Current

(V = 200 Vdc, I = 0)

mAdc

CEO

Collector Cutoff Current

(V = 200 Vdc, V

—

CEX

= 1.5 Vdc, T = 125 C)

CB EB(off)

Emitter Cutoff Current (V

= 5.0 Vdc, I = 0)

—

5.0

EBO

ON CHARACTERISTICS

DC Current Gain

(I = 1.0 Adc, V

(I = 2.5 Adc, V

—

= 5.0 Vdc)

Collector–Emitter Saturation Voltage

(I = 1.0 Adc, I = 0.1 Adc)

—

0.8

Vdc

CE(sat)

Base–Emitter Saturation Voltage

(I = 1.0 Adc, I = 0.1 Adc)

—

1.2

BE(sat)

DYNAMIC CHARACTERISTICS

2.5

—

MHz

Current–Gain — Bandwidth Product

(I = 200 mAdc, V

C CE

= 10 Vdc, f = 1.0 MHz)

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12 3 4

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