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MJ413 PDF预览

MJ413

更新时间: 2024-11-15 10:55:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 72K
描述
isc Silicon NPN Power Transistor

MJ413 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

MJ413 数据手册

 浏览型号MJ413的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJ413  
DESCRIPTION  
·High Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 325V(Min.)  
·DC Current Gain-  
: hFE= 20-80@ IC= 0.5A  
APPLICATIONS  
·Designed for medium to high voltage inverters, converters,  
regulators and switching circuits.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEX  
VEBO  
IC  
PARAMETER  
VALUE  
400  
400  
5
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current-Continuous  
Base Current-Continuous  
Collector Power Dissipation@TC=25  
Junction Temperature  
10  
A
IB  
2
A
PC  
125  
150  
-65~200  
W
TJ  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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