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MJ413 PDF预览

MJ413

更新时间: 2024-01-20 20:10:06
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管局域网
页数 文件大小 规格书
2页 110K
描述
10 Amp NPN Silicon Power Transistors 125W

MJ413 技术参数

生命周期:Obsolete包装说明:HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code:compliant风险等级:5.76
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

MJ413 数据手册

 浏览型号MJ413的Datasheet PDF文件第2页 
M C C  
MJ413  
MJ423  
MJ431  
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10 Amp  
NPN Silicon  
Power Transistors  
125W  
)HDWXUHV  
High Collector-Emitter Voltage VCES=400V  
DC Current Gain Specified 3.5A  
High Frequency Response to 2.5 MHz  
0D[LPXPꢀ5DWLQJVꢀ  
TO-3  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance: 1.0 /W junction to case  
A
N
E
C
K
Characteristic  
Symbol  
VCEX  
VCB  
VEB  
IC  
Max  
400  
400  
5.0  
10  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Base Current  
D
U
V
L
H
2
1
G
B
IB  
2.0  
Total Device Dissipation @TC=25  
Derate above 25  
Watts  
W/  
Q
PD  
125  
1.0  
PIN 1.  
PIN 2.  
CASE.  
BASE  
EMITTER  
COLLECTOR  
Figure 1 - Power Derating Curve  
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
E
G
H
K
MIN  
1.550  
-----  
.250  
.038  
0.55  
.430  
.215  
.440  
.665  
-----  
.151  
1.187  
.131  
MAX  
REF  
1.050  
.335  
.043  
0.70  
BSC  
BSC  
.480  
BSC  
.830  
.165  
BSC  
.188  
MIN  
39.37  
-----  
MAX  
REF  
26.67  
8.51  
1.09  
1.77  
BSC  
BSC  
12.19  
BSC  
21.08  
4.19  
BSC  
4.77  
NOTE  
6.35  
0.97  
1.40  
10.92  
5.46  
11.18  
16.89  
-----  
L
N
Q
U
V
3.84  
30.15  
3.33  
150  
0
50  
Temperature °C  
Power Dissipation (W) - Versus - Temperature °C  
100  
www.mccsemi.com  

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