Datasheet > MHPA18010N

MHPA18010N

更新时间： 2024-11-11 03:49:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器射频
页数	文件大小	规格书
4页	68K
描述
CDMA Band RF Linear LDMOS Amplifier

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MHPA18010N 数据手册

Document Number: MHPA18010N

Rev. 4, 5/2006

Freescale Semiconductor

Technical Data

CDMA Band

RF Linear LDMOS Amplifier

MHPA18010N

Designed for Class AB amplifier applications in 50 ohm systems operating in

the 1800 to 1900 MHz frequency band. A silicon FET design provides

outstanding linearity and gain. In addition, the excellent group delay and phase

linearity characteristics are ideal for digital CDMA and GSM modulation

systems.

• Typical CDMA Performance: 1840 MHz, 28 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

1805-1880 MHz

10 W, 24.5 dB

RF HIGH POWER LDMOS AMPLIFIER

• Adjacent Channel Power: -51 dBc @ 30 dBm Average Power,

885 kHz Channel Spacing

• Power Gain: 24.5 dB Min (@ f = 1840 MHz)

Features

• Excellent Phase Linearity and Group Delay Characteristics

• Ideal for Feedforward Base Station Applications

• N Suffix Indicates Lead-Free Terminations

CASE 301AP-02, STYLE 3

Table 1. Maximum Ratings (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

dBm

°C

DC Supply Voltage

RF Input Power (Single Carrier CW)

Storage Temperature Range

+20

stg

- 40 to +100

- 20 to +100

Operating Case Temperature Range

°C

Table 2. Electrical Characteristics (V = 28 Vdc, V

≅ 8 V Set for Supply Current of 600 mA, T = 25°C, 50 Ω System)

BIAS

Characteristic

Symbol

Min

—

Typ

600

25.5

0.2

Max

—

Unit

Supply Current

Power Gain

(f = 1840 MHz)

24.5

—

Gain Flatness

(f = 1805 - 1880 MHz)

(f = 1840 MHz)

0.5

—

Power Output @ 1 dB Comp.

Input VSWR

P1dB

—

41.5

1.5:1

dBm

(f = 1805 - 1880 MHz)

(f = 1840 MHz)

VSWR

—

2:1

Noise Figure

—

Adjacent Channel Power Rejection @ 30 dBm Average Power,

1.23 MHz BW, 885 kHz Channel Spacing

ACPR

—

-58

- 51

dBc

MHPA18010N

RF Device Data

Freescale Semiconductor

12 3 4

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