MGR1018

更新时间： 2024-11-10 22:30:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	155K
描述
Power Manager Gallium Arsenide Power Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGR1018 数据手册

Order this document

by MGR1018/D

SEMICONDUCTOR TECHNICAL DATA

. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity

protection diodes, these state-of-the-art devices have the following features:

• Planar Epitaxial Construction

• Nitride Passivation for Stable Blocking Characteristics

• Monolithic Dual Die Available (MGR2018CT)

GALLIUM ARSENIDE

RECTIFIER

10 AMPERES

180 VOLTS

• Epoxy Meets UL94, V @ 1/8″

• Hyperfast and Soft Reverse Recovery Over Specified Temperature

Range (15 ns)

Mechanical Characteristics

• Weight: 1.9 grams (approximately)

1,3

2,4

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads

are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped 50 units per plastic tube

• Marking: MGR1018

CASE 221A-06

TO-220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

180

RRM

RWM

DC Forward Current

(T = 110°C)

Peak Repetitive Forward Current

FRM

(At Rated V , Square Wave, 20 kHz, T = 85°C)

Non–Repetitive Peak Surge Current

FSM

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

Operating Junction Temperature and Storage Temperature

THERMAL CHARACTERISTICS

T , T

–55 to 175

°C

stg

Thermal Resistance – Junction to Case

– Junction to Ambient

θJC

θJA

4.3

°C/W

ELECTRICAL CHARACTERISTICS

T =25°C T =125°C

Maximum Instantaneous Forward Voltage (1), see Figure 2

µA

(I = 10 A)

1.4

1.1

1.5

1.1

(I = 5 A)

T =25°C T =125°C

Maximum Instantaneous Reverse Current, see Figure 4

(V = 180 V)

685

120

(V = 90 V)

T =25°C T =125°C

Typical Reverse Recovery Time (2)

(V = 150 V, I = 5 A, di/dt = 200 A/µs)

12.6

12.4

12.7

(V = 150 V, I = 10 A, di/dt = 200 A/µs)

T =25°C T =125°C

Typical Peak Reverse Recovery Current

(V = 150 V, I = 5 A, di/dt = 200 A/µs)

1.5

1.6

1.7

(V = 150 V, I = 10 A, di/dt = 200 A/µs)

Note: This data sheet contains advance information only and is subject to change without notice.

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

(2) trr measured projecting from 25% of IRM to ground.

Motorola RF Device Data

Motorola, Inc. 1995

12 3 4 5 6

中文翻译

下载PDF

与MGR1018相关器件

型号	品牌	获取价格	描述	数据表
MGR1018CT	MOTOROLA	获取价格	10A, 180V, GALLIUM ARSENIDE, RECTIFIER DIODE, DIE
MGR1201	MCC	获取价格	12 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts
MGR1201_08	MCC	获取价格	12 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts
MGR1201-B	MCC	获取价格	Rectifier Diode,
MGR1201-BP	MCC	获取价格	12 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts
MGR1201-BP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, TO-220AC,
MGR1202	MCC	获取价格	12 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts
MGR1202-B	MCC	获取价格	Rectifier Diode,
MGR1202-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
MGR1202-BP-HF	MCC	获取价格	暂无描述

与MGR1018相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MGR1018

MGR1018 数据手册

与MGR1018相关器件

与MGR1018相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGR1018

MGR1018 数据手册

与MGR1018相关器件

与MGR1018相关文章

您还可以找

您在本页遇到什么问题？