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MGR1018CT PDF预览

MGR1018CT

更新时间: 2024-11-11 13:11:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 155K
描述
10A, 180V, GALLIUM ARSENIDE, RECTIFIER DIODE, DIE

MGR1018CT 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:X-XUUC-NReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.84Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:HYPERFAST SOFT RECOVERY POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:GALLIUM ARSENIDE二极管类型:RECTIFIER DIODE
JESD-30 代码:X-XUUC-N最大非重复峰值正向电流:60 A
元件数量:1相数:1
最大输出电流:10 A封装主体材料:UNSPECIFIED
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
认证状态:Not Qualified最大重复峰值反向电压:180 V
最大反向恢复时间:0.013 µs表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

MGR1018CT 数据手册

 浏览型号MGR1018CT的Datasheet PDF文件第2页浏览型号MGR1018CT的Datasheet PDF文件第3页浏览型号MGR1018CT的Datasheet PDF文件第4页浏览型号MGR1018CT的Datasheet PDF文件第5页浏览型号MGR1018CT的Datasheet PDF文件第6页 
Order this document  
by MGR1018/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity  
protection diodes, these state-of-the-art devices have the following features:  
Planar Epitaxial Construction  
Nitride Passivation for Stable Blocking Characteristics  
Monolithic Dual Die Available (MGR2018CT)  
GALLIUM ARSENIDE  
RECTIFIER  
10 AMPERES  
180 VOLTS  
Epoxy Meets UL94, V @ 1/8  
O
Hyperfast and Soft Reverse Recovery Over Specified Temperature  
Range (15 ns)  
Mechanical Characteristics  
Weight: 1.9 grams (approximately)  
1,3  
2,4  
4
Finish: All External Surfaces Corrosion Resistant and Terminal Leads  
are Readily Solderable  
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds  
Shipped 50 units per plastic tube  
Marking: MGR1018  
1
2
3
CASE 221A-06  
TO-220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
180  
V
RRM  
RWM  
R
V
DC Forward Current  
(T = 110°C)  
C
I
10  
20  
60  
A
A
DC  
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 20 kHz, T = 85°C)  
R
C
Non–Repetitive Peak Surge Current  
I
A
FSM  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
Operating Junction Temperature and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
55 to 175  
°C  
J
stg  
Thermal Resistance – Junction to Case  
– Junction to Ambient  
R
θJC  
R
θJA  
4.3  
64  
°C/W  
ELECTRICAL CHARACTERISTICS  
T =25°C T =125°C  
Maximum Instantaneous Forward Voltage (1), see Figure 2  
V
V
µA  
ns  
A
J
J
F
(I = 10 A)  
F
1.4  
1.1  
1.5  
1.1  
(I = 5 A)  
F
T =25°C T =125°C  
Maximum Instantaneous Reverse Current, see Figure 4  
I
R
J
J
(V = 180 V)  
R
25  
1
685  
120  
(V = 90 V)  
R
T =25°C T =125°C  
Typical Reverse Recovery Time (2)  
t
rr  
J
J
(V = 150 V, I = 5 A, di/dt = 200 A/µs)  
R
F
12.6  
13  
12.4  
12.7  
(V = 150 V, I = 10 A, di/dt = 200 A/µs)  
R
F
T =25°C T =125°C  
Typical Peak Reverse Recovery Current  
(V = 150 V, I = 5 A, di/dt = 200 A/µs)  
I
RM  
J
J
R
F
1.5  
1.6  
1.6  
1.7  
(V = 150 V, I = 10 A, di/dt = 200 A/µs)  
R
F
Note: This data sheet contains advance information only and is subject to change without notice.  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.  
(2) trr measured projecting from 25% of IRM to ground.  
Motorola, Inc. 1995  

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