生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 元件数量: | 1 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MG400J1US21 | TOSHIBA | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
获取价格 |
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MG400J1US41 | TOSHIBA | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
获取价格 |
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MG400J1US42 | TOSHIBA | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
获取价格 |
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MG400J1US45 | TOSHIBA | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
获取价格 |
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MG400J1US46 | TOSHIBA | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
获取价格 |
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MG400J1US51 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
获取价格 |