Datasheet > MG12225WB-BN2MM

MG12225WB-BN2MM

更新时间： 2024-11-09 19:44:43

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
5页	1274K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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MG12225WB-BN2MM 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	2.29	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MG12225WB-BN2MM 数据手册

Power Module

1200V 225A IGBT Module

RoHS

MG12225WB-BN2MM

Features

• IGBT³CHIP(Trench+Field

Stop technology)

• Free wheeling diodes

with fast and soft reverse

recovery

• Low saturation voltage

and positive temperature

coefﬁcient

•Temperature sense

included

• Fast switching and short

tail current

Applications

• AC motor control

• Photovoltaic/Fuel cell

• Motion/servo control

• Inverter and power

supplies

Module Characteristics (T_J= 25°C, unless otherwise speciﬁed)

Symbol

T_{J max}

T_{J op}

Parameters

Test Conditions

Min

Typ

3000

350

Max

150

125

Unit

°C

Max. JunctionTemperature

OperatingTemperature

StorageTemperature

InsulationTest Voltage

ComparativeTracking Index

Module-to-Sink

-40

T_stg

V_isol

AC, t=1min

CTI

250

2.5

Torque

Recommended (M5)

Recommended (M6)

N·m

Module Electrodes

Weight

Absolute Maximum Ratings (T_J= 25°C, unless otherwise speciﬁed)

Symbol

IGBT

V_CES

Parameters

Test Conditions

Values

Unit

Collector - Emitter Voltage

Gate - Emitter Voltage

T_J=25°C

1200

V_GES

T_C=25°C

T_C=80°C

t_p=1ms

325

225

450

1050

I_C

DC Collector Current

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

Diode

V_RRM

Repetitive Reverse Voltage

Average Forward Current

T_J=25°C

T_C=25°C

T_C=80°C

1200

225

160

I_F(AV)

I_FRM

Repetitive Peak Forward Current

t_p=1ms

450

I²t

T_J=125°C, t=10ms, V_R=0V

9100

A²s

MG12225WB-BN2MM

Speciﬁcations are subject to change without notice.

Revised:10/05/16

152

12 3 4 5

中文翻译

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