Datasheet > MG12600WB-BR2MM

MG12600WB-BR2MM

更新时间： 2024-09-23 15:45:51

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
5页	1548K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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MG12600WB-BR2MM 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	2.26
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MG12600WB-BR2MM 数据手册

IGBT Power Module

Power Module

1200V 600 A IGBT Module

RoHS

MG12600WB-BR2MM

Features

• Trench-gate ﬁeld stop

IGBT technology

• Free wheeling diodes

with fast and soft reverse

recovery

• Low saturation voltage

and positive temperature

coefﬁcient

• Temperature sense

included

• Fast switching and short

tail current

• T_{J max}= 175 °C

Applications

Agency Approvals

• Industrial and servo

drives

• UPS

AGENCY

AGENCY FILE NUMBER

E71639

• Welding

• Solar inverters

• RoHS compliant

• High-power converters

Module Characteristics (T_C= 25 °C, unless otherwise speciﬁed)

Symbol

T_{J max}

T_{J op}

Parameters

Max. JunctionTemperature

OperatingTemperature

StorageTemperature

Isolation Breakdown Voltage

to heatsink

Test Conditions

Values

Unit

°C

175

-40~150

-40~125

3000

°C

T_stg

°C

V_isol

AC, 50 Hz(R.M.S), t = 1 minute

Recommended (M5)

2.5~5

3~5

N·m

Torque

Weight

lolerminal

Recommended (M6)

350

Absolute Maximum Ratings (T_C= 25 °C, unless otherwise speciﬁed)

Symbol

IGBT

V_CES

Parameters

Test Conditions

Values

Unit

Collector Emitter Voltage

Gate Emitter Voltage

T_J= 25 °C

1200

V_GES

750

T_C= 25 °C

T_C= 80 °C

t_p= 1 ms

I_C

DC Collector Current

600

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

1200

2500

Diode

V_RRM

I_F(AV)

Repetitive Reverse Voltage

Average Forward Current

T_J= 25 °C

T_C= 25 °C

1200

600

1200

I_FRM

I²t

Repetitive Peak Forward Current

t_p= 1ms

KA²s

T_J= 125 °C, t = 10 ms, V_R= 0 V

MG12600WB-BR2MM

Speciﬁcations are subject to change without notice.

Revised:10/05/16

331

12 3 4 5

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