生命周期: | Obsolete | 包装说明: | , CARD88 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.84 |
访问模式: | PAGE | 最长访问时间: | 70 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/SELF REFRESH | 备用内存宽度: | 16 |
I/O 类型: | COMMON | JESD-30 代码: | X-XXMA-X88 |
内存密度: | 33554432 bit | 内存集成电路类型: | DRAM CARD |
内存宽度: | 32 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 88 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 55 °C |
最低工作温度: | 组织: | 1MX32 | |
输出特性: | 3-STATE | 封装主体材料: | UNSPECIFIED |
封装等效代码: | CARD88 | 封装形状: | UNSPECIFIED |
封装形式: | MICROELECTRONIC ASSEMBLY | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 1024 |
座面最大高度: | 85.598 mm | 自我刷新: | YES |
最大待机电流: | 0.0005 A | 子类别: | DRAMs |
最大压摆率: | 0.6 mA | 最大供电电压 (Vsup): | 3.465 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | NO | 技术: | MOS |
温度等级: | COMMERCIAL | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MF14M1-J57AT00 | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-J57AT01 | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-J57ATXX | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-L17AT | MITSUBISHI |
获取价格 |
DRAM Card, 4MX32, 70ns, MOS, CARD-88 | |
MF14M1-L17AT00 | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-L17AT01 | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-L17ATXX | MITSUBISHI |
获取价格 |
DRAM Card, 1MX32, 70ns, MOS | |
MF14M1-L18AT | MITSUBISHI |
获取价格 |
DRAM Card, 4MX32, 80ns, MOS, CARD-88 | |
MF14M1-L18ATXX | MITSUBISHI |
获取价格 |
Fast Page DRAM Module, 1MX32, 80ns, CMOS | |
MF14M1-L27AT | MITSUBISHI |
获取价格 |
DRAM Card, 4MX36, 70ns, MOS, CARD-88 |