Datasheet > ME4947-G

ME4947-G

更新时间： 2024-11-18 07:07:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	687K
描述
The ME4947 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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ME4947-G 数据手册

ME4947/ME4947-G

P-Channel 60-V (D-S) MOSFET

GENERAL DESCRIPTION

FEATURES

● RDS(ON)≦72mΩ@VGS=-10V

The ME4947 is the P-Channel logic enhancement mode power field

effect transistors are produced using high cell density, DMOS trench

technology. This high density process is especially tailored to

minimize on-state resistance. These devices are particularly suited

for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits

where high-side switching , and low in-line power loss are needed in

a very small outline surface mount package.

● RDS(ON)≦94mΩ@VGS=-4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

● Power Management in Note book

● Portable Equipment

● Battery Powered System

● DC/DC Converter

● Load Switch

● DSC

PIN CONFIGURATION

● LCD Display inverter

(SOP-8)

Top View

Ordering Information: ME4947 (Pb-free)

ME4947-G (Green product-Halogen free)

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Symbol

Steady State

Unit

VDSS

VGSS

-60

±20

-4.4

Gate-Source Voltage

Continuous Drain

Current(Tj=150℃)

TA=25℃

T^A=70℃

I^D

-3.5

Pulsed Drain Current

IDM

-18

2.5

TA=25℃

TA=70℃

Maximum Power Dissipation

P^D

1.6

Operating Junction Temperature

-55 to 150

℃

RθJA

Thermal Resistance-Junction to Ambient*

℃/W

*The device mounted on 1in²FR4 board with 2 oz copper

Apr, 2010-Ver1.0

12 3 4

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