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ME4V51B20S882  PDF预览

ME4V51B20S882

更新时间: 2024-11-09 18:09:19
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 578K
描述
ME4V51B20S882 | 20V Clamp 4.5V ESD 1-Ch Bi-dir 80pF SOD882

ME4V51B20S882 数据手册

 浏览型号ME4V51B20S882 的Datasheet PDF文件第2页浏览型号ME4V51B20S882 的Datasheet PDF文件第3页 
ESD Supressor  
4.5V Bidirectional SOD-882  
ME4V51B20S882  
FEATURE  
IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)  
ESD Protection for one Bidirectional Channel  
Low Leakage Current  
Low Clamping Voltage  
Solid-State Silicon-Avalanche Technology  
APPLICATION  
Cellular Handsets &Accessories  
Notebooks & Handhelds  
Digital Cameras  
Personal Digital Assistants (PDAs)  
Portable Instrumentation  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
Unit  
ESD Voltage (Contact discharge)  
±30  
±30  
VESD  
KV  
ESD Voltage (Air discharge)  
Peak Pulse Current(tp=8/20μs)  
Operating & Storage Temperature Range  
IPP  
40  
A
˚C  
TJ, TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
VRWM  
VBR  
IR  
--  
--  
4.6  
--  
--  
--  
4.5  
--  
V
V
IBR=1mA  
VR=4.5V  
--  
1
μA  
V
VC  
IPP=40A, tp=8/20μs  
--  
20  
80  
--  
Off State Junction Capacitance  
CJ  
Vdc=0, f=1MHz  
--  
--  
pF  
Notes: TJ= 25ºC unless otherwise specified  
Rev. 0a 02/03/20  
Meritek Electronics Corporation | www.meritekusa.com  

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