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ME4V51B8V5S882  PDF预览

ME4V51B8V5S882

更新时间: 2024-11-19 18:09:47
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 575K
描述
ME4V51B8V5S882 | 8.5V Clamp 4.5V ESD 1-Ch Bi-dir 110pF SOD882

ME4V51B8V5S882 数据手册

 浏览型号ME4V51B8V5S882 的Datasheet PDF文件第2页浏览型号ME4V51B8V5S882 的Datasheet PDF文件第3页 
ESD Supressor  
4.5V Bidirectional SOD-882  
ME4V51B8V5S882  
FEATURE  
IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)  
ESD Protection for one Bidirectional Channel  
Low Leakage Current  
Low Clamping Voltage  
Solid-State Silicon-Avalanche Technology  
APPLICATION  
Cellular Handsets & Accessories  
Notebooks & Handhelds  
Digital Cameras  
Personal Digital Assistants (PDAs)  
Portable Instrumentation  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
Unit  
ESD Voltage (Contact discharge)  
±30  
±30  
VESD  
KV  
ESD Voltage (Air discharge)  
˚C  
Operating & Storage Temperature Range  
TJ, TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-Off Voltage  
VRWM  
VBR1  
VBR2  
IR  
--  
--  
4.6  
5.3  
--  
--  
--  
4.5  
--  
V
V
IBR1=1mA  
IBR2=1mA  
VR=4.5V  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
--  
--  
V
--  
5
μA  
IPP=1A, tp=8/20μs  
IPP=28A, tp=8/20μs  
Vdc=0, f=1MHz  
--  
--  
8.5  
20  
110  
VC  
CJ  
V
--  
--  
Off State Junction Capacitance  
--  
80  
pF  
Notes: TJ= 25ºC unless otherwise specified  
Rev. 0a 02/03/20  
Meritek Electronics Corporation | www.meritekusa.com  

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