Datasheet > MDWC0150ERH

MDWC0150ERH

更新时间： 2024-05-23 22:22:28

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
5页	611K
描述
WLCSP-6P

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中文翻译

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MDWC0150ERH 数据手册

MDWC0150ERH

Common-Drain Dual N-Channel Trench MOSFET 12V, 19A, 2.75 mΩ

General Description

Features

The MDWC0150ERH uses advanced Magnachip’s

MOSFET Technology, which provides high performance in

on-state resistance and excellent reliability. Excellent low

R_SS(ON), low gate charge operation and operation for

Battery Application.

- V_SS= 12V

- Source-Source ON Resistance;

R_{SS(ON) typ.}2.1mΩ @ V_GS= 4.5V

R_{SS(ON) typ.}2.2mΩ @ V_GS= 3.8V

R_{SS(ON) typ.}2.4mΩ @ V_GS= 3.1V

R_{SS(ON) typ.}3.1mΩ @ V_GS= 2.5V

Applications

- Portable Battery Protection

Bottom View

3.05mm*1.77mm WLCSP

Absolute Maximum Ratings (T_A= 25^oC unless otherwise noted)

Characteristics

Symbol

Rating

Units

Source-Source Voltage

Gate-Source Voltage

V_SSS

V_GSS

I_S

±8

DC^*1

Pulse

DC^*1

Source Current

I_SP

Total Power Dissipation

Channel Temperature

P_D

1.63

150

^oC

T_ch

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance

R_θJA

76.7

^oC/W

Jan. 2021. Rev 1.2

Magnachip Semiconductor Ltd.

12 3 4 5

中文翻译

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