Datasheet > MDWC0152ERH

MDWC0152ERH

更新时间： 2024-05-23 22:22:23

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
5页	560K
描述
WLCSP-6P

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中文翻译

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MDWC0152ERH 数据手册

MDWC0152ERH

Common-Drain Dual N-Channel Trench MOSFET 12V, 15A, 5.1mΩ

General Description

Features

The MDWC0152ERH uses advanced Magnachip’s

MOSFET Technology, which provides high performance in

on-state resistance and excellent reliability. Excellent low

R_SS(ON), low gate charge operation and operation for

Battery Application.

- V_SS= 12V

- Source-Source ON Resistance;

R_{SS(ON) typ.}4.0mΩ @ V_GS= 4.5V

R_{SS(ON) typ.}4.3mΩ @ V_GS= 3.8V

R_{SS(ON) typ.}4.8mΩ @ V_GS= 3.1V

R_{SS(ON) typ.}5.9mΩ @ V_GS= 2.5V

Applications

- Portable Battery Protection

Bottom View

2.14mm*1.67mm WLCSP

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Units

Source-Source Voltage

Gate-Source Voltage

V_SSS

V_GSS

I_S

±8

DC^*1

Source Current

Pulse

I_SP

Total Power Dissipation

DC^*1

P_D

1.85

150

^oC

Channel Temperature

T_ch

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance

R_θJA

67.4

^oC/W

Jan. 2021. Rev 1.1

Magnachip Semiconductor Ltd.

12 3 4 5

中文翻译

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