Datasheet > MDWC0342ERH

MDWC0342ERH

更新时间： 2024-09-26 17:15:43

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1137K
描述
WLCSP 6P

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中文翻译

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MDWC0342ERH 数据手册

MDWC0342E

Common-Drain Dual N-Channel Trench MOSFET 12V

General Description

Features

The MDWC0342E uses advanced Magnachip’s MOSFET

- V_SS= 12V

Technology, which provides high performance in on-state

- Source-Source ON Resistance;

resistance and excellent reliability. Excellent low R_SS(ON)

low gate charge operation and operation for Battery

Application.

R_SS(ON)

R_{SS (ON)}

5.7 mΩ @ V_GS= 4.5V

5.75mΩ @ V_GS= 3.8V

7.8 mΩ @ V_GS= 3.1V

12.5mΩ @ V_GS= 2.5V

Applications

- Portable Battery Protection

Bottom View

1. Source (FET1)

2. Gate (FET1)

3. Source (FET1)

4. Source (FET2)

5. Gate (FET2)

6. Source (FET2)

2.68mm*1.68mm WLCSP

Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)

Characteristics

Symbol

V_SSS

V_GSS

Rating

Units

Source-Source Voltage

Gate-Source Voltage

±8

DC^*1

9.6

Source Current

Pulse^*2

DC^*1

ISp

Total Power Dissipation

Channel Temperature

Thermal Resistance

0.83

150

Tch

^oC

^oC/W

^oC

DC^*1

Max.

Rthja

T_J, T_stg

150

Junction and Storage Temperature Range

-55~150

Jan. 2021. Rev 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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