Datasheet > MDU5512

MDU5512

更新时间： 2024-12-01 01:22:59

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美格纳 - MGCHIP		/
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描述
Dual Asymmetric N-channel Trench MOSFET 30V

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MDU5512 数据手册

MDU5512

Dual Asymmetric N-channel Trench MOSFET 30V

General Description

Features

The MDU5512 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDU5512 is suitable for DC/DC converter and

general purpose applications.

FET1

FET2

V_DS= 30V

I_D= 80A @V_GS= 10V



V_DS= 30V

I_D= 46.1A

R_DS(ON)

< 8.9mΩ

< 3.6mΩ @V_GS= 10V

< 4.5mΩ @V_GS= 4.5V

< 12.5mΩ

100% UIL Tested

100% Rg Tested



S1/D2

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

FET1

FET2

Unit

Gate-Source Voltage

V_GSS

±20

46.1

29.2

11.3

9.0

±12

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

70.4

18.2

14.5

200

78.1

31.3

2.1

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

I_DM

100

31.3

12.5

1.9

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

P_D

1.2

1.3

Single Pulse Avalanche Energy ⁽²⁾

E_AS

171

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

FET1

FET2

Unit

^oC/W

R_θJC

1.6

Feb. 2012 Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...9

中文翻译

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