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MDU5693 PDF预览

MDU5693

更新时间: 2024-12-01 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
9页 1633K
描述
Dual Asymmetric N-channel Trench MOSFET 30V

MDU5693 数据手册

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MDU5693  
Dual Asymmetric N-channel Trench MOSFET 30V  
General Description  
Features  
The MDU5693 uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDU5693 is suitable for DC/DC converter and  
general purpose applications.  
FET1  
FET2  
VDS = 30V  
ID = 100A @VGS = 10V  
VDS = 30V  
ID = 52A  
RDS(ON)  
< 5.0mΩ  
< 8.5mΩ  
< 2.5mΩ @VGS = 10V  
< 3.2mΩ @VGS = 4.5V  
100% UIL Tested  
100% Rg Tested  
S2  
S2  
5
S2  
6
7
G2  
8
S1/D2  
4
1
D1  
D1  
D1  
3
2
2
1
3
4
G1  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
FET1  
FET2  
Unit  
30  
V
V
Gate-Source Voltage  
VGSS  
±20  
70  
±12  
135  
100  
108  
25  
TC=25oC (Silicon Limited)  
TC=25oC (Package Limited)  
TC=70oC  
TA=25oC  
TA=70oC  
52  
Continuous Drain Current (1)  
ID  
57  
A
15.3  
12.4  
208  
46.3  
2.2  
43  
20  
Pulsed Drain Current  
Power Dissipation  
IDM  
PD  
400  
73  
A
TC=25oC  
TA=25oC  
W
2.5  
72  
Single Pulse Avalanche Energy (2)  
EAS  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
FET1  
FET2  
Characteristics  
Symbol  
Unit  
Typ.  
Max  
Typ.  
Max  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
RθJA  
RθJC  
47.5  
2.2  
57  
41.7  
1.3  
50  
oC/W  
2.7  
1.7  
1
Jan. 2015 Ver. 1.0  
MagnaChip Semiconductor Ltd.  

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