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MDU5593S PDF预览

MDU5593S

更新时间: 2024-12-01 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
9页 1558K
描述
Dual Asymmetric N-channel Trench MOSFET 30V

MDU5593S 数据手册

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MDU5593S  
Dual Asymmetric N-channel Trench MOSFET 30V  
General Description  
Features  
The MDU5593S uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDU5593S is suitable for DC/DC converter and  
general purpose applications.  
FET1  
FET2  
VDS = 30V  
ID = 40A @VGS = 10V  
VDS = 30V  
ID = 34A  
RDS(ON)  
< 8.0mΩ  
< 3.3mΩ @VGS = 10V  
< 5.0mΩ @VGS = 4.5V  
< 11.0mΩ  
100% UIL Tested  
100% Rg Tested  
S2  
5
S2  
6
S2  
8
7
G2  
S1/D2  
3
1
D1  
2
2
D1  
1
3
D1  
4
G1  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
FET1  
FET2  
Unit  
V
30  
±20  
95  
Gate-Source Voltage  
VGSS  
±20  
52  
V
TC=25oC (Silicon Limited)  
Continuous Drain Current (1)  
TC=25oC (Package Limited)  
TA=25oC  
ID  
34  
40  
A
13  
21  
Pulsed Drain Current  
Power Dissipation  
IDM  
PD  
40  
100  
44.6  
2.5  
A
TC=25oC  
TA=25oC  
35.7  
2.2  
60  
W
Single Pulse Avalanche Energy (2)  
EAS  
60  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
FET1  
57  
FET2  
Unit  
50  
oC/W  
RθJC  
3.5  
2.8  
1
Jun. 2013 Ver1.2  
MagnaChip Semiconductor Ltd.  

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