Datasheet > MDF7N50BTH

MDF7N50BTH

更新时间： 2024-11-29 17:15:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1099K
描述
TO-220F

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中文翻译

获取价格

技术参数
数据手册

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MDF7N50BTH 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MDF7N50BTH 数据手册

MDF7N50B

N-Channel MOSFET 500V, 7.0 A, 0.9Ω

General Description

Features

The MDF7N50B uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 I_D= 7.0A

 R_DS(ON)≤ 0.9Ω

@V_GS= 10V

MDF7N50B is suitable device for SMPS, high

Speed switching and general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

500

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

7.0*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

4.2*

I_DM

P_D

28*

T_C=25^oC

Derate above 25 ^oC

0.29

11.4

4.5

W/ ^oC

V/ns

^oC

Repetitive Avalanche Energy⁽¹⁾

E_AR

dv/dt

E_AS

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

Junction and Storage Temperature Range

※ Id limited by maximum junction temperature

270

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

62.5

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJC

3.5

Aug. 2021 Version 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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