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MDF7N65B PDF预览

MDF7N65B

更新时间: 2024-11-29 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 820K
描述
N-Channel MOSFET 650V, 7.0A, 1.35(ohm)

MDF7N65B 数据手册

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MDF7N65B  
NꢁChannelꢀMOSFETꢀ650V,ꢀ7.0A,ꢀ1.35ꢂ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theseꢀ Nꢁchannelꢀ MOSFETꢀ areꢀ producedꢀ usingꢀ advancedꢀ  
MagnaChip’sꢀ MOSFETꢀ Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁ  
stateꢀ resistance,ꢀ highꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ650Vꢀ  
IDꢀ=ꢀ7.0Aꢀ ꢀ  
RDS(ON)ꢀ≤ꢀ1.35ꢂꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
quality.ꢀ  
Applicationsꢀ  
Theseꢀ devicesꢀ areꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀ  
ꢀ  
ꢀ  
PowerꢀSupplyꢀ  
PFCꢀ  
HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ  
G
TOꢁ220Fꢀ  
MDFꢀSeriesꢀ  
ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
DrainꢁSourceꢀVoltageꢀ  
Symbolꢀ  
Ratingꢀ  
650ꢀ  
Unitꢀ  
Vꢀ  
VDSS  
GateꢁSourceꢀVoltageꢀ  
VGSS  
±30ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ ContinuousꢀDrainꢀCurrentꢀ  
7.0*ꢀ  
4.4*ꢀ  
28*ꢀ  
Aꢀ  
IDꢀ  
IDM  
PDꢀ  
ꢀ TC=100oCꢀ  
Aꢀ  
ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ PowerꢀDissipationꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
42ꢀ  
Wꢀ  
Derateꢀaboveꢀ25 oCꢀ  
0.33ꢀ  
13.1ꢀ  
4.5ꢀ  
W/ꢀoCꢀ  
mJꢀ  
V/nsꢀ  
mJꢀ  
oC  
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ  
PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
SingleꢀPulseꢀAvalancheꢀEnergy(4)  
ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
EAR  
dv/dtꢀ  
EAS  
TJ,ꢀTstg  
212ꢀ  
ꢁ55~150  
*ꢀIdꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
62.5ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
oC/Wꢀ  
3.01ꢀ  
ꢀ ꢀ ꢀ ꢀ  
1
Junꢀ2011ꢀVersionꢀ2.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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