Datasheet > MDF7N60BTH

MDF7N60BTH

更新时间： 2024-11-29 17:15:27

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1195K
描述
TO-220F

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技术参数
数据手册

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MDF7N60BTH 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.71
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MDF7N60BTH 数据手册

MDF7N60B

N-Channel MOSFET 600V, 7.0A, 1.15Ω

General Description

Features

 V_DS= 600V

 V_DS= 660V

 I_D= 7.0A

These N-channel MOSFET are produced using advanced

Magnachip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

@ T_jmax

@ V_GS= 10V

 R_DS(ON)≤ 1.15Ω

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Applications

 Power Supply

 PFC

 High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

Rating

600

Unit

Drain-Source Voltage

V_DSS

T_jmax

Drain-Source Voltage @ T_jmax

Gate-Source Voltage

660

V_GSS

I_D

±30

7.0*

4.4*

28*

T_C=25^oC

Continuous Drain Current

T_C=100^oC

Pulsed Drain Current⁽¹⁾

I_DM

P_D

T_C=25^oC

Power Dissipation

Derate above 25 ^oC

0.33

13.1

4.5

W/ ^oC

V/ns

^oC

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

220

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

62.5

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJC

3.01

Aug. 2021 Version 1.5

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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