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MCP6N11T-010E/SN PDF预览

MCP6N11T-010E/SN

更新时间: 2024-11-01 19:15:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器光电二极管
页数 文件大小 规格书
50页 5450K
描述
INSTRUMENTATION AMPLIFIER, 3000 uV OFFSET-MAX, 35 MHz BAND WIDTH, PDSO8, 3.90 MM, PLASTIC, SOIC-8

MCP6N11T-010E/SN 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:8 weeks风险等级:5.55
放大器类型:INSTRUMENTATION AMPLIFIER最大平均偏置电流 (IIB):0.005 µA
标称带宽 (3dB):35 MHz最小共模抑制比:62 dB
最大输入失调电流 (IIO):0.001 µA最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:3
最大非线性:0.05%功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
标称压摆率:9 V/us子类别:Instrumentation Amplifier
供电电压上限:6.5 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

MCP6N11T-010E/SN 数据手册

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MCP6N11  
500 kHz, 800 µA Instrumentation Amplifier  
Features  
Description  
• Rail-to-Rail Input and Output  
Microchip Technology Inc. offers the single MCP6N11  
instrumentation amplifier (INA) with Enable/VOS Cali-  
bration pin (EN/CAL) and several minimum gain  
options. It is optimized for single-supply operation with  
rail-to-rail input (no common mode crossover distor-  
tion) and output performance.  
• Gain Set by 2 External Resistors  
• Minimum Gain (GMIN) Options:  
1, 2, 5, 10 or 100 V/V  
• Common Mode Rejection Ratio (CMRR): 115 dB  
(typical, GMIN = 100)  
Two external resistors set the gain, minimizing gain  
error and drift-over temperature. The reference voltage  
(VREF) shifts the output voltage (VOUT).  
• Power Supply Rejection Ratio (PSRR): 112 dB  
(typical, GMIN = 100)  
• Bandwidth: 500 kHz (typical, Gain = GMIN  
• Supply Current: 800 μA/channel (typical)  
• Single Channel  
)
The supply voltage range (1.8V to 5.5V) is low enough  
to support many portable applications. All devices are  
fully specified from -40°C to +125°C.  
• Enable/VOS Calibration pin: (EN/CAL)  
• Power Supply: 1.8V to 5.5V  
These parts have five minimum gain options (1, 2, 5, 10  
and 100 V/V). This allows the user to optimize the input  
offset voltage and input noise for different applications.  
• Extended Temperature Range: -40°C to +125°C  
Typical Applications  
Typical Application Circuit  
• High Side Current Sensor  
• Wheatstone Bridge Sensors  
• Difference Amplifier with Level Shifting  
• Power Control Loops  
VBAT  
+1.8V  
to  
10 Ω  
IDD  
VDD  
U1  
+5.5V  
MCP6N11  
VOUT  
Design Aids  
RF  
• Microchip Advanced Part Selector (MAPS)  
• Demonstration Board  
200 kΩ  
VFG  
RG  
10 kΩ  
• Application Notes  
VREF  
Block Diagram  
Package Types  
VDD VSS  
VOUT  
MCP6N11  
MCP6N11  
2×3 TDFN *  
VOUT  
RM4  
SOIC  
I4  
RF  
VFG  
V
V
EN/CAL  
V
EN/CAL  
1
2
8
7
1
2
8
7
FG  
FG  
GM2  
RG  
Σ
V
V
V
V
EP  
9
IM  
DD  
IM  
DD  
VREF  
I2  
I3  
VREF  
VIP  
V
V
3
4
6
5
V
V
3
4
6
5
IP  
OUT  
IP  
OUT  
I1  
V
V
SS  
REF  
V
SS  
REF  
GM3  
VTR  
Low Power  
VIP  
VIM  
GM1  
POR  
* Includes Exposed Thermal Pad (EP); see Table 3-1.  
VIM  
VOS Calibration  
EN/CAL  
© 2011 Microchip Technology Inc.  
DS25073A-page 1  

MCP6N11T-010E/SN 替代型号

型号 品牌 替代类型 描述 数据表
MCP6N11-100E/SN MICROCHIP

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INSTRUMENTATION AMPLIFIER, 3000 uV OFFSET-MAX, 35 MHz BAND WIDTH, PDSO8, 3.90 MM, PLASTIC,
MCP6N11-010E/SN MICROCHIP

类似代替

INSTRUMENTATION AMPLIFIER, 3000 uV OFFSET-MAX, 35 MHz BAND WIDTH, PDSO8, 3.90 MM, PLASTIC,
MCP6N11-001E/SN MICROCHIP

类似代替

INSTRUMENTATION AMPLIFIER, 3000 uV OFFSET-MAX, 35 MHz BAND WIDTH, PDSO8, 3.90 MM, PLASTIC,

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