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MCP6482T-E/SN PDF预览

MCP6482T-E/SN

更新时间: 2024-11-26 18:59:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器光电二极管
页数 文件大小 规格书
50页 1756K
描述
OP-AMP

MCP6482T-E/SN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:8 weeks风险等级:5.32
放大器类型:OPERATIONAL AMPLIFIER标称共模抑制比:89 dB
最大输入失调电压:1500 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:3功能数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
座面最大高度:1.75 mm标称压摆率:2.7 V/us
子类别:Operational Amplifier供电电压上限:6.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:4000 kHz
宽度:3.9 mmBase Number Matches:1

MCP6482T-E/SN 数据手册

 浏览型号MCP6482T-E/SN的Datasheet PDF文件第2页浏览型号MCP6482T-E/SN的Datasheet PDF文件第3页浏览型号MCP6482T-E/SN的Datasheet PDF文件第4页浏览型号MCP6482T-E/SN的Datasheet PDF文件第5页浏览型号MCP6482T-E/SN的Datasheet PDF文件第6页浏览型号MCP6482T-E/SN的Datasheet PDF文件第7页 
MCP6481/2/4  
4 MHz, Low-Input Bias Current Op Amps  
Features  
Description  
• Low-Input Bias Current  
- 150 pA (typical, TA = +125°C)  
• Low Quiescent Current  
- 240 µA/amplifier (typical)  
• Low-Input Offset Voltage  
- ±1.5 mV (maximum)  
The Microchip MCP6481/2/4 family of operational  
amplifiers (op amps) has low-input bias current  
(150 pA, typical at 125°C) and rail-to-rail input and  
output operation. This family is unity gain stable and  
has a gain bandwidth product of 4 MHz (typical). These  
devices operate with a single-supply voltage as low as  
2.2V, while only drawing 240 µA/amplifier (typical) of  
quiescent current. These features make the family of  
op amps well suited for photodiode amplifier, pH  
electrode amplifier, low leakage amplifier, and battery-  
powered signal conditioning applications, etc.  
• Supply Voltage Range: 2.2V to 5.5V  
• Rail-to-Rail Input/Output  
• Gain Bandwidth Product: 4 MHz (typical)  
• Slew Rate: 2.7 V/µs (typical)  
• Unity Gain Stable  
The MCP6481/2/4 family is offered in single  
(MCP6481), dual (MCP6482), quad (MCP6484)  
packages. All devices are designed using an advanced  
CMOS process and fully specified in extended  
temperature range from -40°C to +125°C.  
• No Phase Reversal  
• Small Packages  
- Singles in SC70-5, SOT-23-5  
• Extended Temperature Range  
- -40°C to +125°C  
Related Parts  
• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op  
Amps  
Applications  
• MCP6491/2/4: 7.5 MHz, Low-Input Bias Current  
Op Amps  
• Photodiode Amplifier  
• pH Electrode Amplifier  
• Low Leakage Amplifier  
• Piezoelectric Transducer Amplifier  
• Active Analog Filter  
• Battery-Powered Signal Conditioning  
Design Aids  
• SPICE Macro Models  
• FilterLab® Software  
• MAPS (Microchip Advanced Part Selector)  
• Analog Demonstration and Evaluation Boards  
• Application Notes  
Package Types  
MCP6482  
MCP6481  
MCP6484  
MCP6482  
SOIC, MSOP  
SOIC, TSSOP  
2x3 TDFN*  
SC70, SOT-23  
V
1
2
3
5 V  
4 V  
V
OUTA  
1
8
V
OUTA  
V
1
2
3
4
8 V  
V
14 V  
OUTD  
OUT  
1
2
3
4
5
DD  
OUTA  
DD  
DD  
V
V
13  
V
V
+
7
6
SS  
V
+
2
7 V  
6 V  
IND  
OUTB  
V
+
INA  
INA  
EP  
9
OUTB  
INA  
V
+
IN  
V
12 V  
11 V  
10 V  
+
IN  
V
INB  
V
3
4
V
INA  
IND  
INA  
INB  
INA  
V
5 V  
+
V
DD  
5
V
V
+
SS  
INB  
SS  
SS  
INB  
V
+
+
INB  
INC  
9
8
V
VINB  
6
7
INC  
V
V
OUTC  
* Includes Exposed Thermal Pad (EP); see Table 3-1.  
OUTB  
2012-2013 Microchip Technology Inc.  
DS20002322C-page 1  
 

MCP6482T-E/SN 替代型号

型号 品牌 替代类型 描述 数据表
MCP6482-E/MS MICROCHIP

完全替代

OP-AMP
MCP6482T-E/MS MICROCHIP

完全替代

OP-AMP
MCP6482-E/SN MICROCHIP

完全替代

OP-AMP

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