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MCM72F8DG12 PDF预览

MCM72F8DG12

更新时间: 2024-09-29 22:24:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 存储内存集成电路静态存储器信息通信管理
页数 文件大小 规格书
12页 171K
描述
2MB and 4MB Synchronous Fast Static RAM Module

MCM72F8DG12 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:12 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-XDMA-N168
内存密度:18874368 bit内存集成电路类型:SRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:168
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX72
输出特性:3-STATE可输出:YES
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:BICMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

MCM72F8DG12 数据手册

 浏览型号MCM72F8DG12的Datasheet PDF文件第2页浏览型号MCM72F8DG12的Datasheet PDF文件第3页浏览型号MCM72F8DG12的Datasheet PDF文件第4页浏览型号MCM72F8DG12的Datasheet PDF文件第5页浏览型号MCM72F8DG12的Datasheet PDF文件第6页浏览型号MCM72F8DG12的Datasheet PDF文件第7页 
Order this document  
by MCM72F8/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM72F8  
MCM72F9  
2MB and 4MB Synchronous Fast  
Static RAM Module  
TheMCM72F8(2MB)isconfiguredas256Kx72bitsandtheMCM72F9(4MB)  
is configured as 512K x 72 bits. Both are packaged in a 168–pin dual–in–line  
memory module DIMM. Each module uses Motorola’s 3.3 V 256K x 18 bit  
flow–through BurstRAMs.  
168–LEAD DIMM  
CASE 1115J–01  
TOP VIEW  
Address (A), data inputs (DQ, DP), and all control signals except output enable  
(G) are clock (K) controlled through positive–edge–triggered noninverting  
registers.  
1
Write cycles are internally self–timed and initiated by the rising edge of the  
clock (K) input. This feature provides increased timing flexibility for incoming  
signals. Synchronous byte write (W) allows writes to either individual bytes or to  
both bytes.  
11  
Single 3.3 V + 10%, – 5% Power Supply  
Plug and Pin Compatibility with 2MB and 4MB  
Multiple Clock Pins for Reduced Loading  
All Inputs and Outputs are LVTTL Compatible  
Byte Write Capability  
Fast SRAM Access Times: 8/9/12 ns  
Decoupling Capacitors for Each Fast Static RAM  
High Quality Multi–Layer FR4 PWB With Separate Power and Ground  
Planes  
40  
41  
Amp Connector, Part Number: 390064–4  
168–Pin DIMM Module  
84  
REV 3  
11/26/97  
Motorola, Inc. 1997  

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