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MCM72FB8ML

更新时间: 2024-09-29 22:51:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 脉冲
页数 文件大小 规格书
20页 256K
描述
256K x 72 Bit Burst RAM Multichip Module

MCM72FB8ML 数据手册

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Order this document  
by MCM72FB8ML/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM72FB8ML  
MCM72PB8ML  
Advance Information  
256K x 72 Bit BurstRAM  
Multichip Module  
MULTICHIP MODULE  
PBGA  
The256Kx72multichipmoduleusesfour4MbitsynchronousfaststaticRAMs  
designed to provide a burstable, high performance, secondary cache for the  
PowerPC and other high performance microprocessors. It is organized as  
256K words of 72 bits each. This device integrates input registers, an output reg-  
ister (MCM72PB8ML only), a 2–bit address counter, and high speed SRAM onto  
a single monolithic circuit for reduced parts count in cache data RAM applica-  
tions. Synchronous design allows precise cycle control with the use of an exter-  
nal clock (K). BiCMOS circuitry reduces the overall power consumption of the  
integrated functions for greater reliability.  
CASE 1103B–01  
Addresses (SA), data inputs (DQx), and all control signals except output  
enable(G) and linear burst order (LBO) are clock (K) controlled through positive–  
edge–triggered noninverting registers.  
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst  
addresses can be generated internally (burst sequence operates in linear or  
interleaved mode dependent upon the state of LBO) and controlled by the burst  
address advance (ADV) input pin.  
PIN A1  
INDICATION  
(corner without  
fiducial)  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals.  
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-  
nous write enable (SW) are provided to allow writes to either individual bytes or  
to all bytes. The eight bytes are designated as “a” through “h”. SBa controls DQa,  
SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx  
are asserted with SW. All bytes are written if either SGW is asserted or if all SBx  
and SW are asserted.  
TOP VIEW  
The module can be configured as either a pipelined or flow–through SRAM.  
For read cycles, pipelined SRAMs output data is temporarily stored by an edge–  
triggered output register and then released to the output buffers at the next rising  
edge of clock (K). Flow–through SRAMs allow output to simply flow freely from  
the memory array.  
The multichip module operates from a 3.3 V core power supply and all outputs  
operate on a separate 2.5 V or 3.3 V power supply. All inputs and outputs are  
JEDEC standard JESD8–5 compatible.  
3.3 V + 10%, – 5% Core Power Supply, 2.5 V or 3.3 V I/O Supply  
ADSP, ADSC, and ADV Burst Control Pins  
Option for Pipeline or Flow–Through (Speeds Guaranteed When Module is  
Purchased by Appropriate Part Number)  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Single–Cycle Deselect Timing  
Internally Self–Timed Write Cycle  
Byte Write and Global Write Control  
JEDEC BGA Pin Assignment  
PIN A1  
INDICATION  
BOTTOM VIEW  
(corner with  
fiducial)  
(Drawings Not to Scale)  
The PowerPC name is a trademark of IBM Corp., used under license therefrom.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
REV 1  
7/30/97  
Motorola, Inc. 1997  

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