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MCM72F8DG9 PDF预览

MCM72F8DG9

更新时间: 2024-09-29 22:24:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
12页 171K
描述
2MB and 4MB Synchronous Fast Static RAM Module

MCM72F8DG9 数据手册

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Order this document  
by MCM72F8/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM72F8  
MCM72F9  
2MB and 4MB Synchronous Fast  
Static RAM Module  
TheMCM72F8(2MB)isconfiguredas256Kx72bitsandtheMCM72F9(4MB)  
is configured as 512K x 72 bits. Both are packaged in a 168–pin dual–in–line  
memory module DIMM. Each module uses Motorola’s 3.3 V 256K x 18 bit  
flow–through BurstRAMs.  
168–LEAD DIMM  
CASE 1115J–01  
TOP VIEW  
Address (A), data inputs (DQ, DP), and all control signals except output enable  
(G) are clock (K) controlled through positive–edge–triggered noninverting  
registers.  
1
Write cycles are internally self–timed and initiated by the rising edge of the  
clock (K) input. This feature provides increased timing flexibility for incoming  
signals. Synchronous byte write (W) allows writes to either individual bytes or to  
both bytes.  
11  
Single 3.3 V + 10%, – 5% Power Supply  
Plug and Pin Compatibility with 2MB and 4MB  
Multiple Clock Pins for Reduced Loading  
All Inputs and Outputs are LVTTL Compatible  
Byte Write Capability  
Fast SRAM Access Times: 8/9/12 ns  
Decoupling Capacitors for Each Fast Static RAM  
High Quality Multi–Layer FR4 PWB With Separate Power and Ground  
Planes  
40  
41  
Amp Connector, Part Number: 390064–4  
168–Pin DIMM Module  
84  
REV 3  
11/26/97  
Motorola, Inc. 1997  

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