Datasheet > 存储 > SRAM> MCM63P733ATQ90

MCM63P733ATQ90

更新时间： 2024-11-19 22:05:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		存储内存集成电路静态存储器
页数	文件大小	规格书
16页	242K
描述
128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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技术参数
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MCM63P733ATQ90 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.66	Is Samacsys：	N
最长访问时间：	5 ns	其他特性：	SELF TIMED WRITE CYCLE
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	4194304 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	32
功能数量：	1	端子数量：	100
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	128KX32
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	3.63 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

MCM63P733ATQ90 数据手册

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by MCM63P733A/D

SEMICONDUCTOR TECHNICAL DATA

MCM63P733A

Advance Information

128K x 32 Bit Pipelined

BurstRAM Synchronous

Fast Static RAM

The MCM63P733A is a 4M–bit synchronous fast static RAM designed to pro-

vide a burstable, high performance, secondary cache for the PowerPC and

other high performance microprocessors. It is organized as 128K words of 32

bits each, fabricated with high performance silicon gate CMOS technology.

This device integrates input registers, an output register, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced

parts count in cache data RAM applications. Synchronous design allows pre-

cise cycle control with the use of an external clock (K). CMOS circuitry reduces

the overall power consumption of the integrated functions for greater reliability.

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G) and Linear Burst Order (LBO) are clock (K) controlled through

positive–edge–triggered noninverting registers.

TQ PACKAGE

TQFP

CASE 983A–01

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P733A (burst sequence

operates in linear or interleaved mode dependent upon state of LBO) and con-

trolled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls

DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte

writes SBx are asserted with SW. All bytes are written if either SGW is asserted

or if all SBx and SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

The MCM63P733A operates from a 3.3 V core power supply and all outputs

operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC

standard JESD8–5 compatible.

•

MCM63P733A–133 = 4 ns Access/7.5 ns Cycle (133 MHz)

MCM63P733A–117 = 4.2 ns Access/8.5 ns Cycle (117 MHz)

MCM63P733A–100 = 4.5 ns Access/10 ns Cycle (100 MHz)

MCM63P733A–90 = 5 ns Access/11 ns Cycle (90 MHz)

3.3 V + 10%/– 5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Single–Cycle Deselect

Sleep Mode (ZZ)

100–Pin TQFP Package

•

PowerPC is a trademark of IBM Corp.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

3/24/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

MCM63P733A

12 3 4 5 6 7...16

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与MCM63P733ATQ90相关器件

型号	品牌	获取价格	描述	数据表
MCM63P733ATQ90R	MOTOROLA	获取价格	128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P733ATQ90R	NXP	获取价格	128KX32 CACHE SRAM, 5ns, PQFP100, TQFP-100
MCM63P736	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ100	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ100R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ133	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ133R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ66	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ66R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736ZP100	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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