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MCL4448 PDF预览

MCL4448

更新时间: 2024-01-12 07:27:38
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 669K
描述
500mW 100 Volt Silicon Epitaxial Diode

MCL4448 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.74
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJESD-609代码:e0
最大非重复峰值正向电流:2 A元件数量:1
最高工作温度:175 °C最大输出电流:0.15 A
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MCL4448 数据手册

 浏览型号MCL4448的Datasheet PDF文件第2页浏览型号MCL4448的Datasheet PDF文件第3页浏览型号MCL4448的Datasheet PDF文件第4页 
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TM  
Micro Commercial Components  
MCL4448  
Features  
·
·
·
·
Silicon epitaxial planar diode  
Fast Switching diodes  
500mW power dissipation  
This diode is also available in the DO-35 case with the type  
designation 1N4448, in the Minimelf case with the type designation  
DL4448  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
500mW 100 Volt  
Silicon Epitaxial Diode  
MICROMELF  
Maximum Ratings  
·
·
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Maximum Thermal Resistance; 350K/W Junction To Ambient  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Cathode Mark  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Reverse Voltage  
VR  
75V  
C
Peak Reverse  
Voltage  
Average Rectified  
Current  
Power Dissipation  
Junction Temperature  
VRM  
100V  
B
Resistive Load  
f > 50Hz  
IAV  
150mA  
A
PTOT  
TJ  
500mW1)  
150OC  
TA=25OC  
Surge Forward  
Current  
IFSM  
500mA  
t<1S, TJ=25OC  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.0V(MAX) IFM = 100mA;  
0.62-0.72V IFM = 5.0mA  
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
TJ=25OC, VR=20V  
DIM  
A
MAX  
.079  
.008  
.051  
MAX  
2.0  
NOTE  
25nA  
.071  
1.8  
.10  
5.0uA  
50uA  
IR  
VR=75V,  
B
C
.004  
.047  
.20  
VR=20V T =150OC  
J
1.20  
1.30  
Æ
Minimum Reverse  
Breakdown Voltage  
Typical Junction  
Capacitance  
Tested with  
100uA puse  
Measured at  
VR=VF=0V  
SUGGESTED SOLDER  
PAD LAYOUT  
V(BR)R  
CJ  
100V  
0.039  
4.0pF  
IF=10mA,  
VR = 6.0V  
RL=100OHMS  
Reverse Recovery  
Time  
T
rr  
4.0nS  
0.055”  
1) Valid provided that leads at a distance of 8mm from case are kept  
at ambient temperature(DO-35)  
0.030”  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
Revision: A  
2011/01/01  

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