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TM
Micro Commercial Components
MCL4448
Features
·
·
·
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Silicon epitaxial planar diode
Fast Switching diodes
500mW power dissipation
This diode is also available in the DO-35 case with the type
designation 1N4448, in the Minimelf case with the type designation
DL4448
500mW 100 Volt
Silicon Epitaxial Diode
MICROMELF
Maximum Ratings
·
·
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Operating Temperature: -55OC to +150OC
Storage Temperature: -55OC to +150OC
Maximum Thermal Resistance; 350K/W Junction To Ambient
Cathode Mark
Electrical Characteristics @ 25OC Unless Otherwise Specified
Reverse Voltage
VR
75V
C
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction Temperature
VRM
100V
B
Resistive Load
f > 50Hz
IAV
150mA
A
PTOT
TJ
500mW1)
150OC
TA=25OC
Surge Forward
Current
IFSM
500mA
t<1S, TJ=25OC
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
1.0V(MAX) IFM = 100mA;
0.62-0.72V IFM = 5.0mA
DIMENSIONS
INCHES
MIN
MM
MIN
TJ=25OC, VR=20V
DIM
A
MAX
.079
.008
.051
MAX
2.0
NOTE
25nA
.071
1.8
.10
5.0uA
50uA
IR
VR=75V,
B
C
.004
.047
.20
VR=20V T =150OC
J
1.20
1.30
Æ
Minimum Reverse
Breakdown Voltage
Typical Junction
Capacitance
Tested with
100uA puse
Measured at
VR=VF=0V
SUGGESTED SOLDER
PAD LAYOUT
V(BR)R
CJ
100V
0.039
4.0pF
IF=10mA,
VR = 6.0V
RL=100OHMS
Reverse Recovery
Time
T
rr
4.0nS
0.055”
1) Valid provided that leads at a distance of 8mm from case are kept
at ambient temperature(DO-35)
0.030”
www.mccsemi.com
Revision: 4
2004/06/21