Datasheet > MCL4448-AP

MCL4448-AP

更新时间： 2024-09-26 21:01:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	452K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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MCL4448-AP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

MCL4448-AP 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

MCL4448

Features

Silicon epitaxial planar diode

Fast Switching diodes

500mW power dissipation

This diode is also available in the DO-35 case with the type

designation 1N4448, in the Minimelf case with the type designation

DL4448

500mW 100 Volt

Silicon Epitaxial Diode

MICROMELF

Maximum Ratings

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Maximum Thermal Resistance; 350K/W Junction To Ambient

Cathode Mark

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Reverse Voltage

V_R

75V

Peak Reverse

Voltage

Average Rectified

Current

Power Dissipation

Junction Temperature

V_RM

100V

Resistive Load

f > 50Hz

I_AV

150mA

P_TOT

T_J

500mW¹⁾

150^OC

T_A=25^OC

Surge Forward

Current

I_FSM

500mA

t<1S, T_J=25^OC

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

1.0V(MAX) I_FM= 100mA;

0.62-0.72V I_FM= 5.0mA

DIMENSIONS

INCHES

MIN

T_J=25^OC, V_R=20V

DIM

MAX

.079

.008

.051

MAX

2.0

NOTE

25nA

.071

1.8

.10

5.0uA

50uA

I_R

V_R=75V,

.004

.047

.20

V_R=20V T =150^OC

1.20

1.30

Minimum Reverse

Breakdown Voltage

Typical Junction

Capacitance

Tested with

100uA puse

Measured at

V_R=V_F=0V

SUGGESTED SOLDER

PAD LAYOUT

V_(BR)R

C_J

100V

0.039

4.0pF

I_F=10mA,

V_R= 6.0V

R_L=100OHMS

Reverse Recovery

Time

4.0nS

0.055”

1) Valid provided that leads at a distance of 8mm from case are kept

at ambient temperature(DO-35)

0.030”

www.mccsemi.com

Revision: 4

2004/06/21

12 3

中文翻译

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