Datasheet > MCD700-18IO1W

MCD700-18IO1W

更新时间： 2024-11-18 20:57:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	469K
描述
Silicon Controlled Rectifier,

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技术参数
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MCD700-18IO1W 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

MCD700-18IO1W 数据手册

Date: 27.01.2005

IXYS

Data Sheet Issue: 2

Thyristor/Diode Modules M## 700

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

MCA

MCK

MCDA

MDCA

1200

1400

1600

1800

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

700-12io1W

700-14io1W

700-16io1W

700-18io1W

MAXIMUM

LIMITS

1200-1800

1300-1900

VOLTAGE RATINGS

UNITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_water= 17°C, 4l/min ²⁾

Maximum average on-state current. T_water= 42°C, 4l/min ²⁾

Maximum average on-state current. T_water= 85°C, 4l/min ²⁾

847

700

398

I_T(RMS)MNominal RMS on-state current, T_water= 17°C, 4l/min ²⁾

1331

1057

16.5

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_water= 17°C, 4l/min

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10V ³⁾

A²s

A/µs

18.2

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

1.36×10⁶

1.66×10⁶

150

I²t

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Peak reverse gate voltage

300

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

Isolation Voltage ⁵⁾

V_ISOL

T_{vj op}

T_stg

3500

-40 to +125

-40 to +150

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_vjbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r≤ 0.5µs, T_vj= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1

Page 1 of 12

January, 2005

12 3 4 5 6 7...12

中文翻译

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与MCD700-18IO1W相关器件

型号	品牌	获取价格	描述	数据表
MCD72-04IO8	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 180000mA I(T), 400V V(RRM),
MCD72-04IO8B	IXYS	获取价格	Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 400V V(DRM), 400V V(RRM), 1 Elem
MCD72-06IO8	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 180000mA I(T), 600V V(RRM),
MCD72-06IO8B	IXYS	获取价格	Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem
MCD72-08IO1B	IXYS	获取价格	Thyristor Modules Thyristor/Diode Modules
MCD72-08IO8	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 180000mA I(T), 800V V(RRM),
MCD72-08IO8B	IXYS	获取价格	Thyristor Modules Thyristor/Diode Modules
MCD72-08IO8B	LITTELFUSE	获取价格	晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD72-12IO1B	IXYS	获取价格	Thyristor Modules Thyristor/Diode Modules
MCD72-12IO1B	LITTELFUSE	获取价格	晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。

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