MCD162-16IO1

更新时间： 2024-11-19 22:20:39

品牌	Logo	应用领域
IXYS		可控硅二极管
页数	文件大小	规格书
4页	181K
描述
Thyristor Modules Thyristor/Diode Modules

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中文翻译

获取价格

数据手册
替代型号

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MCD162-16IO1 数据手册

MCC 162

MCD 162

I_TRMS= 2x 300 A

I_TAVM= 2x 190 A

V_RRM= 800-1800 V

Thyristor Modules

Thyristor/Diode Modules

V_RSM

V_DSM

V_RRM

V_DRM

Type

Version 1

900

1300

1500

1700

1900

800

1200

1400

1600

1800

MCC 162-08io1

MCC 162-12io1

MCC 162-14io1

MCC 162-16io1

MCC 162-18io1

MCD 162-08io1

MCD 162-12io1

MCD 162-14io1

MCD 162-16io1

MCD 162-18io1

6 7 1

5 4 2

Symbol

Test Conditions

Maximum Ratings

MCC

MCD

I_TRMS, I_FRMS

T_VJ= T_VJM

T_C= 80°C; 180° sine

T_C= 85°C; 180° sine

300

190

181

I_{TAVM FAVM}

, I

5 4 2

I_TSM, I_FSM

T_VJ= 45°C;

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

6000

6400

_VJ= T_VJM

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

5250

5600

V_R= 0

òi²dt

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

180 000

170 000

A²s

Features

●

_VJ= T_VJM

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

137 000

128 000

A²s

International standard package

Direct copper bonded Al₂O₃-ceramic

base plate

●

V_R= 0

(di/dt)_cr

T_VJ= T_VJM

repetitive, I_T= 500 A

150

A/ms

●

Planar passivated chips

Isolation voltage 3600 V~

UL registered, E 72873

Keyed gate/cathode twin pins

f =50 Hz, t_P=200 ms

V_D= 2/3 V_DRM

I_G= 0.5 A

non repetitive, I_T= 500 A

V_DR= 2/3 V_DRM

500

A/ms

V/ms

di_G/dt = 0.5 A/ms

(dv/dt)_cr

P_GM

T_VJ= T_VJM

;

1000

Applications

●

_GK= ¥; method 1 (linear voltage rise)

Motor control

Power converter

Heat and temperature control for

●

T_VJ= T_VJM

I_T= I_TAVM

t_P= 30 ms

t_P= 500 ms

120

●

industrial furnaces and chemical

processes

Lighting control

P_GAV

V_RGM

●

Contactless switches

T_VJ

T_VJM

T_stg

-40...+125

125

-40...+125

°C

Advantages

●

Space and weight savings

Simple mounting

Improved temperature and power

●

V_ISOL

50/60 Hz, RMS

t = 1 min

t = 1 s

3000

3600

●

I_ISOL£ 1 mA

cycling

Reduced protection circuits

M_d

Mounting torque (M6)

Terminal connection torque (M6)

2.25-2.75/20-25 Nm/lb.in.

4.5-5.5/40-48 Nm/lb.in.

●

Weight

Typical including screws

125

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

1 - 4

12 3 4

中文翻译

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MCD162-16IO1 替代型号

型号	品牌	替代类型	描述	数据表
MCD132-16IO1	IXYS	完全替代	Thyristor Modules Thyristor/Diode Modules

与MCD162-16IO1相关器件

型号	品牌	获取价格	描述	数据表
MCD162-16IO1B	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
MCD162-18IO1	IXYS	获取价格	Thyristor Modules Thyristor/Diode Modules
MCD162-18IO1	LITTELFUSE	获取价格	晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD170-12IO1	IXYS	获取价格	Silicon Controlled Rectifier, 350A I(T)RMS, 203000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
MCD170-14IO1	IXYS	获取价格	Silicon Controlled Rectifier, 350A I(T)RMS, 203000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
MCD170-16IO1	IXYS	获取价格	Silicon Controlled Rectifier, 350A I(T)RMS, 203000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 E
MCD170-18IO1	IXYS	获取价格	Silicon Controlled Rectifier, 350A I(T)RMS, 203000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 E
MCD200-14IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 340A I(T)RMS, 216000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
MCD200-16IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 340A I(T)RMS, 216000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 E
MCD200-16IO1	IXYS	获取价格	Silicon Controlled Rectifier, 340A I(T)RMS, 216000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 E

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