Datasheet > MCCD2005

MCCD2005

更新时间： 2024-11-27 01:19:27

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	618K
描述
Dual N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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MCCD2005 数据手册

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

MCCD2005

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Advanced trench MOSFET process technology

•

Ultra low on-resistance with low gate charge

Halogen free available upon request by adding suffix "-HF"

Epoxy meets UL 94 V-0 flammability rating

Dual N-Channel

Power MOSFET

•

Moisture Sensitivity Level 1

Marking:2005

Maximum Ratings @ 25^OC Unless Otherwise Specified

DFN2030-6

Symbol

Parameter

Rating

Unit

V_DS

Drain-source Voltage

I_D

Drain Current-Continuous

Pulsed Drain Current (note1)

Gate-source Voltage

I_DM

V_GS

ꢀ

Thermal Resistance Junction to Ambient

Operating Junction Temperature

Storage Temperature

R/W

R_E

125

T_J

-55 to +150

T_STG

Notes:

1. Repetitive Rating: Pulse width limited by junction temperature.

Equivalent Circuit

Dimensions

INCHES

MIN

DIM

NOTE

MAX

.032

MIN

0.700

MAX

0.800

0.028

0.203REF.

0.050

0.008REF.

0.000

1.950

2.950

1.400

1.600

0000

0.077

0.116

0.002

0.081

0.120

2.050

3.050

1.600

1.800

0.300

0.055

0.063

0.071

0.008

0.012

0.200

0.300

---

0.400

0.018

0.026

0.500TYP.

0.020TYP.

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Revision: A

2016/02/03

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