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MCCD2007A-TP PDF预览

MCCD2007A-TP

更新时间: 2024-11-26 19:58:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 846K
描述
Power Field-Effect Transistor,

MCCD2007A-TP 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

MCCD2007A-TP 数据手册

 浏览型号MCCD2007A-TP的Datasheet PDF文件第2页浏览型号MCCD2007A-TP的Datasheet PDF文件第3页浏览型号MCCD2007A-TP的Datasheet PDF文件第4页 
MCCD2007A  
Features  
Advanced Trench MOSFET Process Technology  
Epoxy Meets UL 94 V-0 Flammability Rating  
Moisture Sensitivity Level 1  
• Halogen Free Available Upon Request By Adding Suffix "-HF"  
Dual N-Channel  
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Power MOSFET  
Maximum Ratings  
• Operating Junction Temperature Range: -55°C to +150°C  
• Storage Temperature: -55°C to +150°C  
DFN2030-6L  
• Maximum Thermal Resistance: 125°C/W Junction to Ambient  
E
L
Parameter  
Drain -source Voltage  
Rating  
20V  
Unit  
V
A
Symbol  
VDS  
M
F
C
Gate -Source Voltage  
Drain Current-Continuous  
Pulsed Drain Current(Note 1)  
Note:  
VGS  
±12  
V
B
ID  
7
A
Pin 1 Dot  
By Marking  
D
IDM  
30  
A
H
G
N
1.Repetitive Rating: Pulse Width Limited by Junction Temperature.  
I
J
O
Internal Structure  
DIMENSIONS  
S2  
S2  
G2  
INCHES  
MM  
6
5
4
DIM  
NOTE  
MIN MAX MIN MAX  
0.077 0.081 1.95 2.05  
A
B
C
D
E
F
G
H
I
0.116 0.120 2.95 3.05  
0.057 0.061 1.45 1.55  
0.065 0.069 1.65 1.75  
0.013 0.017 0.33 0.43  
0.008 0.012 0.20 0.30  
0.008 0.012 0.20 0.30  
0.014 0.018 0.35 0.45  
D1,D2  
1
2
3
Marking:2007  
S1  
S1  
G1  
0.008 TYP.  
0.030 0.033 0.75 0.85  
0.020 TYP. 0.50 TYP.  
0.20 TYP.  
J
L
M
N
O
0.028 0.031 0.70 0.80  
0.004 0.008 0.10 0.20  
0.000 0.002 0.00 0.05  
Rev.3-1-02122019  
1/4  
MCCSEMI.COM  

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