Datasheet > MCC122

MCC122

更新时间： 2024-11-30 21:55:31

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	47K
描述
Thyristor Module

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中文翻译

获取价格

数据手册

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MCC122 数据手册

MCC 122

I_TRMS

I_TAVM

= 2x300 A

= 2x128 A

Thyristor Module

V_{RRM, DRM}= 800-1800 V

Preliminary data

6 7 1

5 4 2

V_RSM

V_DSM

V_RRM

V_DRM

Type

900

1300

1500

1700

1900

800

1200

1400

1600

1800

MCC 122-08io1

MCC 122-12io1

MCC 122-14io1

MCC 122-16io1

MCC 122-18io1

Features

• International standard package

• Direct copper bonded Al₂O₃-ceramic

base plate

Symbol

Conditions

Maximum Ratings

I_TRMS

I_TAVM

300

128

T_C= 85°C; 180° sine

• Planar passivated chips

• Isolation voltage 3600 V~

• UL registered, E 72873

• Keyed gate/cathode twin pins

I_TSM

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

3600

3850

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

3200

3420

Applications

I²dt

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

64800

62300

A²s

• Motor control

• Power converter

• Heat and temperature control for industrial

furnaces and chemical processes

• Lighting control

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

51200

49100

A²s

• Contactless switches

(di/dt)_cr

T_VJ= T_VJM

repetitive, I_T= 500 A

150

A/µs

f = 50Hz, t_P= 200µs

Advantages

V_D= ²/₃V_DRM

• Space and weight savings

• Simple mounting

• Improved temperature and power cycling

• Reduced protection circuits

I_G= 0.5 A

di_G/dt = 0.5 A/µs

non repetitive, I_T= 500 A

V_DR= ²/₃V_DRM

500

A/µs

V/µs

(dv/dt)_cr

P_GM

T_VJ= T_VJM

;

1000

R_GK= ¥; method 1 (linear voltage rise)

Dimensions in mm (1 mm = 0.0394")

T_VJ= T_VJM

I_T= I_TAVM

t_P= 30 µs

t_P= 500 µs

120

P_GAV

V_RGM

T_VJ

T_VJM

T_stg

-40...+125

125

-40...+125

°C

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

3000

3600

M_d

Mounting torque (M6)

Terminal connection torque (M6)

2.25-2.75/20-25 Nm/lb.in.

4.5-5.5/40-48 Nm/lb.in.

Weight

Typical including screws

125

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

1 - 2

中文翻译

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MCC122-08IO1	IXYS	获取价格	Thyristor Module
MCC122-12IO1	IXYS	获取价格	Thyristor Module
MCC122-14IO1	IXYS	获取价格	Thyristor Module
MCC122-16IO1	IXYS	获取价格	Thyristor Module
MCC122-18IO1	IXYS	获取价格	Thyristor Module
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MCC132-06IO1	IXYS	获取价格	Silicon Controlled Rectifier, 300A I(T)RMS, 300000mA I(T), 600V V(DRM), 600V V(RRM), 2 Ele
MCC132-08IO1	IXYS	获取价格	Thyristor Modules Thyristor/Diode Modules
MCC132-08IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 300A I(T)RMS, 300000mA I(T), 800V V(DRM), 800V V(RRM), 2 Ele