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MCC122-16IO1 PDF预览

MCC122-16IO1

更新时间: 2024-11-30 22:20:39
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页数 文件大小 规格书
2页 47K
描述
Thyristor Module

MCC122-16IO1 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-XUFM-X7Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.69
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:150 mA
最大直流栅极触发电压:1.6 V快速连接描述:2G-2GR
螺丝端子的描述:A-K-AK最大维持电流:200 mA
JESD-30 代码:R-XUFM-X7最大漏电流:10 mA
通态非重复峰值电流:3850 A元件数量:2
端子数量:7最大通态电流:300000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:300 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCC122-16IO1 数据手册

 浏览型号MCC122-16IO1的Datasheet PDF文件第2页 
MCC 122  
ITRMS  
ITAVM  
= 2x300 A  
= 2x128 A  
Thyristor Module  
VRRM, DRM = 800-1800 V  
Preliminary data  
3
6 7 1  
5 4 2  
7
6
VRSM  
VDSM  
V
VRRM  
VDRM  
V
Type  
3
4
2
5
1
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MCC 122-08io1  
MCC 122-12io1  
MCC 122-14io1  
MCC 122-16io1  
MCC 122-18io1  
Features  
• International standard package  
• Direct copper bonded Al2O3-ceramic  
base plate  
Symbol  
Conditions  
Maximum Ratings  
ITRMS  
ITAVM  
300  
128  
A
A
TC = 85°C; 180° sine  
• Planar passivated chips  
• Isolation voltage 3600 V~  
• UL registered, E 72873  
• Keyed gate/cathode twin pins  
ITSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
3600  
3850  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
3200  
3420  
A
A
Applications  
I2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
64800  
62300  
A2s  
A2s  
• Motor control  
• Power converter  
• Heat and temperature control for industrial  
furnaces and chemical processes  
• Lighting control  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
51200  
49100  
A2s  
A2s  
• Contactless switches  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 500 A  
150  
A/µs  
f = 50Hz, tP = 200µs  
Advantages  
VD = 2/3 VDRM  
• Space and weight savings  
• Simple mounting  
• Improved temperature and power cycling  
• Reduced protection circuits  
IG = 0.5 A  
diG/dt = 0.5 A/µs  
non repetitive, IT = 500 A  
VDR = 2/3 VDRM  
500  
A/µs  
V/µs  
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
RGK = ¥; method 1 (linear voltage rise)  
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM  
IT = ITAVM  
tP = 30 µs  
tP = 500 µs  
120  
60  
W
W
PGAV  
VRGM  
8
W
V
10  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque (M6)  
Terminal connection torque (M6)  
2.25-2.75/20-25 Nm/lb.in.  
4.5-5.5/40-48 Nm/lb.in.  
Weight  
Typical including screws  
125  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
© 2000 IXYS All rights reserved  
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