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MC10SX1130_06 PDF预览

MC10SX1130_06

更新时间: 2024-09-26 04:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器
页数 文件大小 规格书
9页 151K
描述
LED Driver

MC10SX1130_06 数据手册

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MC10SX1130  
LED Driver  
Description  
The MC10SX1130 is high speed LED Driver/current switch  
specifically targeted for use in FDDI PMD and ANSI X3T9.3  
FibreChannel 266 Mbits/s optical transmitters. The integrated circuit  
contains several unique functional blocks which makes it easily  
configurable for use with a variety of high performance LED devices.  
The part is fabricated using MOSAIC IIIbipolar process. The logic  
is designed so that a data HIGH input results in the modulation current  
http://onsemi.com  
LED DRIVER  
flowing through the I  
pin to turn on the LED.  
OUT  
The device incorporates open collector outputs with a capability of  
driving peak currents of 100 mA. Since the output current switching  
circuitry simply switches current between the complementary outputs,  
the dynamic switching demands on the system power supply are  
greatly reduced. In addition, because the design is pure bipolar, the  
device current drain is insensitive to the data pattern and frequency of  
operation.  
SOIC16  
D SUFFIX  
CASE 751B  
The LED drive current is adjustable through the selection of an  
external set resistor, RSET. In addition, to allow for open loop  
compensation for the LED’s negative optical output power tracking  
over temperature, a circuit is included to provide an adjustable positive  
temperature tracking coefficient to the LED drive current. This is  
controlled through the selection of an external resistor, RTCO.  
The MC10SX1130 incorporates novel pulse stretching circuitry  
which is intended to compensate for the turn-on delay and rise and fall  
time asymmetry inherent in LED devices. The stretch circuitry can be  
used to pre-distort the input signal pulse width to minimize the duty  
cycle distortion of the transmitted optical eye pattern. The stretch  
circuitry supports three different selections of pre-distortion. This  
choice is accomplished through a unique ‘tri-state’ input which can be  
MARKING DIAGRAM  
10SX1130G  
AWLYWW  
A
WL  
Y
WW  
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= PbFree Package  
left open, tied to V , or tied to V to determine the pre-distortion  
CC  
EE  
amount.  
The device provides a V output for either single-ended use or as a  
BB  
DC bias for AC coupling the signal into the device. The V pin  
should only be used as a bias for the MC10SX1130 as its current  
BB  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
sink/source capability is limited. Whenever used, the V pin should  
BB  
be bypassed to ground via a 0.01 mF capacitor.  
Features  
Differential Data Inputs  
Thermally Enhanced 16-Lead SOIC Package  
75 kW Data Input Pulldown Resistors  
+5 V or 5.2 V Operation  
300 MHz Operation  
100 mA Peak Drive Current  
Extremely Low Jitter  
Duty Cycle Distortion Compensation  
Adjustable Output Current Tracking With Temperature  
V Reference Available  
BB  
PbFree Packages are Available*  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 Rev. 3  
MC10SX1130/D  

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