Datasheet > MBRX150

MBRX150

更新时间： 2024-11-12 01:23:07

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	175K
描述
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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MBRX150 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBRX120 – MBRX1100

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 2 0A Peak

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SOD-123

Dim

Min

3.65

2.55

1.40

1.25

0.68

0.25

0.18

0.05

Max

3.90

2.85

1.70

1.35

0.78

0.55

0.13

0.15

Mechanical Data

Case: SOD-123, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.01 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

MBRX MBRX MBRX MBRX MBRX MBRX MBRX

Unit

Characteristic

Symbol

120

130

140

150

160

180

1100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 0.5A

V^FM

I^RM

0.55

0.70

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance

R^ꢀ

°C/W

R^ꢀ^JA

C_j

°C

Operating Temperature Range

Storage Temperature Range

T^j

-55 to +125

-55 to +150

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

www.senocn.com

MBRX120 – MBRX1100

1 of 2

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