Datasheet > MBRX1A0

MBRX1A0

更新时间： 2024-11-11 12:57:15

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	474K
描述
1.0A Patch Schottky diode 100V SOD-123 series

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中文翻译

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数据手册

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MBRX1A0 数据手册

MBRX120 - MBRX1A0

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 1.0 A

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.37”5(9.5mm) lead length,

5 lbs. (2.3kg) tension

SOD-123FL

Dim Min Max

Typ

3.58 3.72 3.65

2.72 2.78 2.75

1.77 1.83 1.80

1.02 1.08 1.05

0.097 1.03 1.00

0.13 0.17 0.15

0.53 0.57 0.55

Mechanical Data

Case: JEDEC SOD-123FL molded

plastic body over passivated junction

Terminals

solderable per MIL-STD-750,

: Plated axial leads,

Method 2026

All Dimensions in mm

Polarity

Mounting Position

: Color band denotes cathode end

: Any

Weight

:0.0007 ounce, 0.02 grams

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

Unit

MBRX120 MBRX130 MBRX140 MBRX160 MBRX180 MBRX1A0

Maximum recurrent peak reverse voltage

V_RRM

100

Maximum RMS voltage

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forword

rectified current T_J=90℃

Peak forward surge current 8.3ms single

half-sine-wave superimposed

on rated load

100

I_(AV)

1.0

I_FSM

Maximum instantaneous @I_FM=1.0A

forward voltage

V^F

I_R

0.50

0.55

0.72

0.85

Repetitive peak reverse current

at rated DC blocking voltage

Typical junction capacitance

Operating temperature range

Storage temperature range

0.3

C_J

T_j

p F

℃

- 55 --- + 125

- 55 --- + 150

T_STG

℃

NOTE1.Measured at f=1.0MHz,V_R=4.0V

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