Datasheet > MBRH120150_V01

MBRH120150_V01

更新时间： 2024-02-20 16:42:31

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	658K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRH120150_V01 数据手册

MBRH120150 thru MBRH120200R

V_RRM= 150 V - 200 V

I_F(AV)= 120 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 150 V to 200 V V_RRM

D-67 Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRH120200(R)

Parameter

Symbol

MBRH120150(R)

Unit

Repetitive peak reverse

voltage

V_RRM

200

150

V_RMS

V_DC

T_j

141

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

106

150

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRH120200(R)

Parameter

Symbol

I_F(AV)

MBRH120150(R)

Unit

Average forward current (per

pkg)

120

I_FSM

t_p= 8.3 ms, half sine

Peak forward surge current

2000

Maximum instantaneous

forward voltage

V_F

I_R

I_FM= 120 A, T_j= 25 °C

0.92

0.88

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Maximum instantaneous

reverse current at rated DC

blocking voltage

Thermal characteristics

Thermal resistance, junction-

case

R_ΘJC

0.48

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrh120150.pdf

12 3

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