Datasheet > MBRH200150_V01

MBRH200150_V01

更新时间： 2024-11-19 01:04:27

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	655K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRH200150_V01 数据手册

MBRH200150 thru MBRH200200R

V_RRM= 150 V - 200 V

I_F(AV)= 200 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 150 V to 200 V V_RRM

D-67 Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRH200200(R)

Parameter

Symbol

MBRH200150(R)

Unit

Repetitive peak reverse

voltage

V_RRM

200

150

V_RMS

V_DC

T_j

141

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

106

150

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRH200200(R)

Parameter

Symbol

I_F(AV)

MBRH200150(R)

Unit

Average forward current (per

pkg)

200

I_FSM

t_p= 8.3 ms, half sine

Peak forward surge current

3000

Maximum instantaneous

forward voltage

V_F

I_R

I_FM= 200 A, T_j= 25 °C

0.92

0.88

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Maximum instantaneous

reverse current at rated DC

blocking voltage

Thermal characteristics

Thermal resistance, junction-

case

R_ΘJC

0.35

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrh200150.pdf

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