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MBRF30H50CT-HE3/45 PDF预览

MBRF30H50CT-HE3/45

更新时间： 2024-11-18 14:53:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 148K
描述
DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

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MBRF30H50CT-HE3/45 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-220AB
包装说明：ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.74
Is Samacsys：NBase Number Matches：1

MBRF30H50CT-HE3/45 数据手册

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New Product  
MBR(F,B)30H35CT thru MBR(F,B)30H60CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
3
2
• High frequency operation  
2
1
1
MBR30HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
MBRF30HxxCT  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
MBRB30HxxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC-Q101 qualified), meets JESD 201 class 2  
whisker test  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 15 A  
35 V to 60 V  
150 A  
0.56 V, 0.59 V  
80 µA, 60 µA  
175 °C  
IR  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
Max. average forward rectified  
current (Fig. 1)  
total device  
per diode  
30  
15  
IF(AV)  
A
mJ  
A
Non-repetitive avalanche energy per diode  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
80  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
IRRM  
ERSM  
150  
Peak repetitive reverse surge current per diode  
at tp = 2.0 µs, 1 kHz  
1.0  
25  
0.5  
20  
A
Peak non-repetitive reverse energy  
(8/20 µs waveform)  
mJ  
Document Number: 88866  
Revision: 31-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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