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MBRF30H60CT-E3 PDF预览

MBRF30H60CT-E3

更新时间： 2024-11-18 12:10:19
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线功效局域网
页数 文件大小 规格书
5页 577K
描述
Dual Common-Cathode Schottky Rectifier

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中文翻译

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MBRF30H60CT-E3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.72
Is Samacsys：N其他特性：LOW POWER LOSS, FREE WHEELING DIODE
应用：EFFICIENCY外壳连接：ISOLATED
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：60 V表面贴装：NO
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBRF30H60CT-E3 数据手册

 浏览型号MBRF30H60CT-E3的Datasheet PDF文件第2页浏览型号MBRF30H60CT-E3的Datasheet PDF文件第3页浏览型号MBRF30H60CT-E3的Datasheet PDF文件第4页浏览型号MBRF30H60CT-E3的Datasheet PDF文件第5页 
MBR(F,B)30H35CT thru MBR(F,B)30H60CT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
3
2
• High frequency operation  
2
1
1
MBR30HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
MBRF30HxxCT  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
MBRB30HxxCT  
PIN 1  
K
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters or polarity protection application.  
PIN 2  
HEATSINK  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
VRRM  
IFSM  
2 x 15 A  
Case: TO-220AB, ITO-220AB, TO-263AB  
35 V to 60 V  
150 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
VF  
IR  
0.56 V, 0.59 V  
80 μA, 60 μA  
175 °C  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified  
current (Fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
IRRM  
ERSM  
150  
A
A
Peak repetitive reverse surge current per diode  
at tp = 2 μs, 1 kHz  
1.0  
25  
0.5  
20  
Peak non-repetitive reverse energy  
(8/20 μs waveform)  
mJ  
Revision: 24-Oct-12  
Document Number: 88866  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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MBRF30H90CT-HE3/45 VISHAY

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 		DIODE 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,
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 		SCHOTTKY BARRIER TYPE DIODE

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