MBRF30L120CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
MBRF30L120CT
SYMBOL
VRRM
UNIT
120
V
V
V
A
Maximum RMS voltage
VRMS
84
Maximum DC blocking voltage
Maximum average forward rectified current
VDC
120
30
IF(AV)
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
30
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
200
1
A
A
Peak repetitive reverse surge current (Note 1)
TYP
0.81
0.66
0.89
0.76
TYP
MAX
0.88
0.75
0.95
0.82
MAX
Maximum instantaneous forward voltage (Note 2)
IF = 15A, TJ=25℃
IF = 15A, TJ=125℃
VF
V
IF = 30A, TJ=25℃
IF = 30A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
IR
1.1
1.7
20
25
mA
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
5
dV/dt
RθJC
TJ
V/μs
OC/W
OC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
OC
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: D1308019
Version: E13