Datasheet > MBRF30150CT-Y

MBRF30150CT-Y

更新时间： 2024-11-19 01:01:35

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
Dual Common Cathode Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBRF30150CT-Y 数据手册

MBRF3045CT-Y thru MBRF30200CT-Y

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

ITO-220AB

Case: ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

MBRF

3045

CT-Y

MBRF

3060

CT-Y

MBRF

3080

CT-Y

MBRF

30100

CT-Y

MBRF

30150

CT-Y

MBRF

30200 UNIT

CT-Y

PARAMETER

SYMBOL

MBRF

3045CT

MBRF

3060CT

MBRF

Marking code

3080CT 30100CT 30150CT 30200CT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25°C

0.85

0.72

0.94

0.82

0.2

0.95

0.80

1.05

0.92

0.70

0.60

0.82

0.73

0.78

0.68

0.90

0.78

I_F=15A, T_J=125°C

V_F

I_F=30A, T_J=25°C

I_F=30A, T_J=125°C

Maximum reverse current @ rated VR T_J=25 °C

T_J=125 °C

I_R

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

°C/W

°C

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1411035

Version: D14

12 3 4

中文翻译

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