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MBRF3035CT PDF预览

MBRF3035CT

更新时间: 2024-01-26 23:44:59
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 207K
描述
Isolated 30.0 AMPS. Schottky Barrier Rectifiers

MBRF3035CT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.78
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.76 V
JESD-609代码:e0最大非重复峰值正向电流:200 A
最高工作温度:150 °C最大输出电流:30 A
最大重复峰值反向电压:35 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MBRF3035CT 数据手册

 浏览型号MBRF3035CT的Datasheet PDF文件第2页 
MBRF3035CT - MBRF30150CT  
Isolated 30.0 AMPS. Schottky Barrier Rectifiers  
ITO-220AB  
Features  
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
o
260 C/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
Cases: ITO-220AB molded plastic body  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked  
Dimensions in inches and (millimeters)  
Mounting position: Any  
Mounting torque: 5 in-lbs. Max.  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
C ambient temperature unless otherwise specified.  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
Symbol  
Type Number  
Units  
3035 3045 3050 3060 3090 30100 30150  
CT  
35  
24  
35  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
CT  
90  
63  
90  
CT  
100 150  
70 105  
100 150  
CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum DC Blocking Voltage  
V
V
V
VRRM  
VRMS  
VDC  
Maximum Average Forward Rectified Current at  
o
30  
15  
TC=130 C  
Total device  
Per Leg  
A
A
I(AV)  
Peak Repetitive Forward Current Per leg (Rated VR,  
o
30  
IFRM  
IFSM  
IRRM  
Square Wave, 20KHz) at Tc=130 C  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
200  
A
A
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
Maximum Instantaneous Forward Voltage at (Note 2)  
o
IF=15A, Tc=25 C  
o
0.75  
0.70  
0.84  
0.70  
0.94  
0.82  
0.95  
0.80  
1.05  
0.92  
IF=15A, Tc=125 C  
0.65  
V
VF  
0.60  
0.82  
0.73  
o
IF=30A, Tc=25 C  
o
IF=30A, Tc=125 C  
Maximum Instantaneous Reverse Current  
o
@ Tc=25 C at Rated DC Blocking Voltage Per Leg  
0.2  
20  
0.2  
15  
0.2  
10  
mA  
mA  
IR  
o
@ Tc=125 C (Note 2)  
Voltage Rate of Change, (Rated VR)  
Typical Junction Capacitance  
1,000  
V/uS  
dV/dt  
580  
480  
360  
1.5  
pF  
Cj  
o
Maximum Thermal Resistance Per Leg (Note 3)  
Operating Junction Temperature Range  
Storage Temperature Range  
1.0  
C/W  
R
θJC  
o
C
TJ  
-65 to +150  
-65 to +175  
o
C
TSTG  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.  
Version: B07  

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