Datasheet > MBRF30200CT

MBRF30200CT

更新时间： 2024-11-20 12:01:15

品牌	Logo	应用领域
TSC		二极管瞄准线功效局域网
页数	文件大小	规格书
3页	259K
描述
30.0 AMPS. Isolated Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF30200CT 数据手册

CREAT BY ART

MBRF3035CT - MBRF30200CT

30.0 AMPS. Isolated Schottky Barrier Rectifiers

ITO-220AB

Features

UL Recognized File # E-326243

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guard-ring for overvoltage protection

High temperature soldering guaranteed:

260℃/10 seconds, at terminals

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Case:ITO-220AB molded plastic body

Terminals: Pure tin plated, lead free, solderable

per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in. - lbs, max

Weight: 1.69 grams

Ordering Information (example)

Packing code

Part No.

Package

Packing

(Green)

C0G

MBRF3035CT ITO-220AB 50 / TUBE

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

Symbol 3035 3045 3050 3060 3090 30100 30150 30200

Unit

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

200

105

150

140

200

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

I_F(AV)

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20KHz)

I_FRM

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

I_RRM

200

Peak Repetitive Reverse Surge Current (Note 1)

0.5

Maximum Instantaneous Forward Voltage (Note 2)

IF=15A, T_A=25℃

0.70

0.60

0.82

0.73

0.75

0.65

0.90

0.78

0.84

0.70

0.94

0.82

0.95

0.80

1.05

0.92

IF=15A, T_A=125℃

V_F

IF=30A, T_A=25℃

IF=30A, T_A=125℃

0.2

Maximum Reverse Current @ Rated VR T_A=25 ℃

T_A=125 ℃

I_R

Voltage Rate of Change (Rated V_R)

Typical Junction Capacitance

10000

dV/dt

V/us

580

480

360

^OC/W

^OC

Typical Thermal Resistance Per Leg

Operating Temperature Range

R_θjC

T_J

- 65 to + 150

Storage Temperature Range

T_STG

Note 1: 2.0uS Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle

Version:J12

12 3

中文翻译

下载PDF

与MBRF30200CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF30200CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-220AB, GREEN, PLASTIC, ITO
MBRF30200CTR	THINKISEMI	获取价格	30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF30200CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF3020CT	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBRF3030CT	TGS	获取价格	TO-220F Plastic-Encapsulate Diodes
MBRF3030CT	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBRF3030CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-220AB, GREEN, PLASTIC, ITO
MBRF3035C	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94V-0
MBRF3035C	VISHAY	获取价格	Dual Schottky Rectifiers
MBRF3035CT	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94V-0

与MBRF30200CT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF30200CT

MBRF30200CT 数据手册

与MBRF30200CT相关器件

与MBRF30200CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF30200CT

MBRF30200CT 数据手册

与MBRF30200CT相关器件

与MBRF30200CT相关文章

您还可以找

您在本页遇到什么问题？